Quantum Chemistry of Solids
I am involved in the calculation of the properties of defects and
impurities in
silicon crystals. Before starting this project I have examined the performance
of various semi-empirical methods (CNDO,INDO,MINDO,MNDO,AM1) for the perfect Si
lattice, and found MINDO/3 the best. I have achieved some nice results with it
since then on H and O defect complexes but now I am stuck because I lack the
bonding parameters between Si and other impurities, notably B, Al, N, and P. Is
anyone aware of such parameters ?
Another problem: our next project is going to be the calculation of defect pro-
perties in metal-oxides (partially ionic). I know about two codes doing that:
HADES and ICECAP. I need answers to the following questions:
1. Are there other alternatives ?
2. Which are the pros and contras for each of them ?
3. Can they run on a RISK 6000 workstation (in reasonable time) ?
4. How (and for how much) can one get hold of them ?
5. Does anyone know the e-mail address of Barry Kunz ?
Thank you all for any information.
Peter Deak
Humboldt-fellow at MPI Stuttgart
DEAK |-at-| DS0MPI11